专注于半导体新型存储器件及集成技术领域，包括阻变存储器、铁电存储器等，研究方向主要集中在开发新型存储材料、优化存储器结构设计以及提高数据存储系统的性能与可靠性，在国际知名期刊已发表多篇文章。
文章：
1. X. Ding, P. Huang, Y. Zhao, Y. Feng and L. Liu, Understanding of the Volatile and Nonvolatile Switching in Ag-Based Memristors, IEEE Transactions on Electron Devices, 69(3), 1034-1040 (2022).
2. X. Ding, X. Wang, Y. Feng, W. Shen and L. Liu, Low operation current of Si/HfO2 double layers based RRAM device with insertion of Si film, Japanese Journal of Applied Physics, 59(SG), SGGB16 (2020).
3. X. Ding, Y. Feng, P. Huang, L. Liu and J. Kang, Low-power resistive switching characteristic in HfO2/TiOx Bi-layer resistive random-access memory, Nanoscale Research Letters, 14(1), 1-7 (2019).
4. X. Ding, L. Liu, Y. Feng and P. Huang, Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device, 2019 Silicon Nanoelectronics Workshop (SNW), IEEE, 1-2 (2019).
5. X. Ding, D. Zhu, Y. Feng, L. Cai, P. Huang, L. Liu and J. Kang, Low-power, multilevel and analog characteristics in the multi-layer-oxide based RRAM devices compatible with CMOS technology, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), IEEE, 1-3 (2018).
专利：
发明专利：双极性阻变存储器及其制备方法 CN202011053896.1
发明专利：阻变存储器件的制备方法、装置、电子设备和存储介质 CN202110727631.3
北京市海淀区中关村大街59号
100872
+86-10-62517997（综合、教务、招生）
